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Renesas Electronics X28HC64SI-90 — Memory (DRAM / SRAM / Flash / EEPROM)

X28HC64SI-90 64Kbit Parallel EEPROM, 90 ns Access

MPNX28HC64SI-90
Active

Renesas X28HC64SI-90, 64Kbit (8K x 8) Parallel EEPROM, 90 ns Access Time, 4.5 V Supply, Industrial Temperature -40°C to 85°C, 28-SOIC Surface Mount.

$7.86Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

X28HC64SI-90 specifications
ParameterValue
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 85°C(TA)
Frame_size64Kbit
Access time90 ns
Memory typeNon-Volatile
Package_typeBulk
Memory formatEEPROM
StatusActive
Supply voltage4.5
Memory organization8K x 8
Write cycle time - word, page5ms

Product details

The Renesas X28HC64SI-90 is a 64 Kbit non-volatile parallel EEPROM organized as 8K x 8 bytes, with a 90 ns access time. The parallel interface allows single-cycle byte reads or writes. The 4.5 V supply voltage places it in the 5 V logic family.

Write cycle timing and endurance

For bulk programming, a page-write mode (the page size is not specified in the brief, but typical parallel EEPROMs of this density use 64-byte pages) reduces the per-byte overhead.

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