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Renesas Electronics X28HC64SI-90 — Memory (DRAM / SRAM / Flash / EEPROM)
Renesas Electronics

X28HC64SI-90 64Kbit Parallel EEPROM, 90 ns Access

MPNX28HC64SI-90
Active

Renesas X28HC64SI-90, 64Kbit (8K x 8) Parallel EEPROM, 90 ns Access Time, 4.5 V Supply, Industrial Temperature -40°C to 85°C, 28-SOIC Surface Mount.

$7.86Ref. price · indicative, final on quote
X28HC64SI-90 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

X28HC64SI-90 Technical Specifications
ParameterValue
Interface_typeParallel
Mounting_typeSurface Mount
Operating temperature high-40°C to 85°C(TA)
Frame_size64Kbit
Access time90 ns
Memory_typeNon-Volatile
Package_typeBulk
Memory formatEEPROM
Product_statusActive
Supply_voltage_v4.5
Memory organization8K x 8
Write cycle time - word, page5ms

Product details

The Renesas X28HC64SI-90 is a 64 Kbit non-volatile parallel EEPROM organized as 8K x 8 bytes, with a 90 ns access time. The parallel interface allows single-cycle byte reads or writes. The 4.5 V supply voltage places it in the 5 V logic family.

The 28-SOIC surface-mount package keeps the board profile low and is compatible with standard reflow profiles.

Write cycle timing and endurance

The write cycle time is 5 ms per word or page — a byte write ties up the bus for that duration, so the host must either poll the ready/busy status or insert a delay between writes. For bulk programming, a page-write mode (the page size is not specified in the brief, but typical parallel EEPROMs of this density use 64-byte pages) reduces the per-byte overhead.

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