650 V, 60 A — the switch cell for motor drives and PFC
The Renesas RJP65T43DPQ-A0#T2 is a trench-gate IGBT rated at 650 V collector-emitter breakdown and 60 A continuous collector current, housed in a TO-247A through-hole package. It targets hard-switched topologies like motor-drive inverters, power-factor-correction stages, and UPS systems where the 150 W power dissipation ceiling and 175 °C maximum junction temperature give thermal headroom for sustained operation.
Switching energy and gate drive budget
Under the test condition of 400 V rail, 20 A collector, 10 Ω gate resistor, and 15 V gate drive, the part switches 170 µJ on-energy and 130 µJ off-energy. The 69 nC total gate charge tells the driver what it needs to push. Turn-on delay is 35 ns, turn-off delay 105 ns at 25 °C, so the switching edge timing is tight enough for most industrial PWM controllers without dead-time compensation tweaks.
Conduction loss at rated current
Vce(on) max is 2.4 V at 15 V gate and 20 A collector — that is the conduction loss floor at the test point. In a real inverter the junction temperature will push that number higher; the 175 °C TJ rating means the part stays in its SOA even when the heatsink is marginal.
Package and mounting — TO-247A
Through-hole TO-247A (supplier device package) with three leads. The large tab area bolts to a heatsink — torque the mounting screw to the recommended value in the datasheet to get the thermal resistance down. Tube shipment, which is the standard for this package size.
ROHS3 compliant. No second-source or successor is listed on the record, so the BOM line is single-sourced to this Renesas part number.