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Renesas Electronics RJK1576DPA-00#J5A

RJK1576DPA-00#J5A N-Channel MOSFET, 150V 25A WPAK(3F)

MPNRJK1576DPA-00#J5A
End of Life

Renesas RJK1576DPA-00#J5A, N-Channel MOSFET, 150 V Vdss, 25 A Id, 58 mOhm Rds(on) @ 12.5 A, 10 V, 8-PowerVDFN package, WPAK(3F) (5x6), Surface Mount, Tape & Reel.

$1.73334Ref. price · indicative, final on quote
Renesas Electronics RJK1576DPA-00#J5A datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RJK1576DPA-00#J5A specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Ta)
Power dissipation65W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Rds on (Max) @ id, vgs58mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

150 V N-Channel MOSFET in a compact WPAK(3F) package

The Renesas RJK1576DPA-00#J5A is an N-channel power MOSFET rated for 150 V drain-to-source voltage and 25 A continuous drain current at 25°C case temperature. The device is built on a standard MOSFET (Metal Oxide) technology and requires a 10 V gate drive to achieve its rated 58 mOhm maximum on-resistance at 12.5 A.

The 8-PowerVDFN package (WPAK(3F) 5x6 mm footprint) is a surface-mount outline with a large exposed pad for thermal transfer to the PCB. The junction-to-case thermal path is the primary heat-removal route; the PCB copper area and vias under the pad are part of the thermal design, not optional.

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