The Renesas RJH65T14DPQ-A0#T0 is a 650 V, 100 A trench-gate IGBT in a TO-247A through-hole package. The trench structure delivers a low on-state voltage of 1.75 V typical at 50 A and 15 V gate drive.
Switching loss and gate drive — 80 nC Qg, 1.3 mJ / 1.2 mJ Eon/Eoff
Total gate charge is 80 nC. Switching energy at 400 V, 50 A, 10 Ω gate resistor, 15 V gate drive is 1.3 mJ turn-on and 1.2 mJ turn-off. Turn-on delay is 38 ns and turn-off delay is 125 ns at 25 °C, giving a fast enough edge for hard-switching topologies. The co-packaged diode has a reverse recovery time of 250 ns, which contributes to turn-on loss and EMI in bridge-leg configurations.
Thermal headroom — 175 °C junction temperature
Rated for a maximum junction temperature of 175 °C. The TO-247A package variant has an enlarged copper tab for improved heat transfer.
ROHS3 compliant.