Renesas Electronics RJH1BF6RDPQ-80#T2
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RJH1BF6RDPQ-80#T2 IGBT, 1100 V, 55 A, TO-247-3

MPN RJH1BF6RDPQ-80#T2
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RJH1BF6RDPQ-80#T2 IGBT, 1100 V Vces, 55 A Ic, 2.7 V Vce(on) @ 15 V / 55 A, TO-247-3 through-hole, 150°C junction, active lifecycle.

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[SPEC] Essential Parameters Snapshot Full Specifications (9)
Package / Case TO-247-3

Full Technical Specifications

9 Parameters
RJH1BF6RDPQ-80#T2 specifications
Parameter / AttributeSpecification / Value
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown1100 V
Current - collector (Ic)55 A
Power - max227.2 W
Operating temperature150°C (TJ)
PackageBulk
CaseTO-247-3
Vce(on) (Max) @ vge, ic2.7V @ 15V, 55A
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Technical Details & Description

1100 V, 55 A IGBT in TO-247-3

The RJH1BF6RDPQ-80#T2 is an N-channel IGBT rated for 1100 V collector-emitter breakdown and 55 A continuous collector current, housed in a TO-247-3 through-hole package. It targets power-switching stages in motor drives, inverters, and industrial power supplies where the 1100 V rating provides headroom for 400 VAC or 600 VDC bus voltages.

Conduction loss at rated current

Vce(on) is specified at 2.7 V typical with a 15 V gate drive at 55 A collector current. This saturation voltage sets the conduction-loss floor — at 55 A the on-state dissipation is roughly 150 W, which drives the heatsink requirement. The 227.2 W maximum power rating gives the thermal budget for switching losses on top of conduction.

150°C junction and mounting

The TO-247-3 package with a large copper tab requires a thermal interface material and a properly torqued screw to the heatsink — the tab is the collector, so electrical isolation is needed unless the heatsink is grounded.

Frequently asked questions

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