Nexperia NP75N04YUG--AY, N-Channel MOSFET, 40 V Vdss, 75 A Id, 4.8 mOhm Rds(on) @ 37.5 A, 10 V, 8-HSON package, 175°C Tj, active.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 1W (Ta), 138W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead Exposed Pad |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.8mOhm @ 37.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 116 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6450 pF @ 25 V |
The NP75N04YUG-E1-AY: The NP75N04YUG--AY is a 40 V, 75 A N-channel MOSFET from Nexperia, built on a standard metal-oxide semiconductor process. A 10 V drive rail is required to achieve the rated Rds(on).
That extra 25°C headroom matters in a high-ambient enclosure or when the load profile includes sustained overload events — the die can absorb more thermal energy before hitting the Tj limit.
No — the NP75N04YUG--AY carries an active lifecycle status.
The maximum gate charge is 116 nC at a 10 V gate drive.
Yes, the NP75N04YUG--AY is ROHS3 compliant.