Renesas NP75N04YLG--AY N-Channel MOSFET, 40 V Vdss, 75 A continuous drain, 4.8 mOhm Rds(on) at 10 V, 116 nC gate charge, 8-PowerLDFN package, surface mount.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Ta) |
| Power dissipation | 138W (Ta) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 4.8mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 116 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6450 pF @ 25 V |
The NP75N04YLG-E1-AY: The NP75N04YLG--AY N-Channel MOSFET dissipates 138 W through the 8-PowerLDFN package's exposed pad.
The gate threshold voltage is 2.5 V maximum at 250 µA drain current, and the drive voltage range for minimum Rds(on) is 4.5 V to 10 V — compatible with 5 V and 10 V gate-drive logic.
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