Renesas NP35N04YUG--AY, N-Channel MOSFET, 40 V Vdss, 35 A Id, 10 mOhm Rds(on) at 10 V Vgs, 54 nC Qg, 8-HSON package, 175°C Tj, Surface Mount, ROHS3 Compliant.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 1W (Ta), 77W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead Exposed Pad |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 17.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2850 pF @ 25 V |
The NP35N04YUG-E1-AY: Gate charge totals 54 nC at 10 V.
Rds(on) is 10 mOhm at 10 V gate drive. Gate charge is 54 nC at 10 V.
It is ROHS3 compliant, meeting the latest restriction-of-hazardous-substances directive for lead-free soldering processes.
Design engineers need full electrical specs to validate fit in schematic.
Sourcing buyers need trusted distributors to order quickly.
Buyers compare costs to stay within BOM budget.
Lifecycle status affects long-term availability and replacement planning.
Engineers and buyers need drop-in alternatives for supply chain flexibility.
Maintenance techs and designers need pin mapping for board layout and replacement.