Skip to main content
Log in
Renesas Electronics ITF86130SK8T — Discrete Semiconductors

ITF86130SK8T N-Channel MOSFET, 30 V, 14 A, 7.8 mOhm Rds(on)

MPNITF86130SK8T
Active

N-channel MOSFET, 30 V drain-source, 14 A continuous drain current, 7.8 mOhm max on-resistance at 10 V gate drive, surface-mount package, -55°C to 150°C junction temperature range.

$1.02Ref. price · indicative, final on quote
Renesas Electronics ITF86130SK8T datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

ITF86130SK8T specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±20 V
Power2.5
Package_typeBulk
Capacitance_uf0.003
StatusActive
Supply voltage30.0
Vgs(Th) (Max) @ id2.5 V @ 250µA
Switching current14.0
Rds on (Max) @ id, vgs7.8mOhm @ 14 A, 10 V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V

Product details

30 V, 14 A N-channel — conduction loss and gate drive

The ITF86130SK8T: The 7.8 mOhm Rds(on) at 14 A and 10 V sets the conduction-loss floor for a switching regulator or load switch. Gate threshold voltage maxes at 2.5 V at 250 µA. Total gate charge is 84 nC at 10 V.

The 2.5 W power dissipation rating sets the thermal budget for a given ambient — actual continuous current derates with temperature per the datasheet's normalised curve. Surface-mount package suited for reflow assembly. The bulk shipping form means the part arrives in tubes or trays, not tape-and-reel — factor that into the pick-and-place feeder setup if the line expects reeled parts.

Frequently asked questions

What is the ITF86130SK8T's Vgs rating?

The gate-source voltage absolute maximum is ±20 V, wider than the typical ±12 V or ±16 V limit on many 30 V N-channel MOSFETs.