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Renesas Electronics 71V65803S100PFI — Discrete Semiconductors

71V65803S100PFI Renesas 9Mbit SRAM, 5 ns, 100 MHz, 100-TQFP

MPN71V65803S100PFI
End of Life

Renesas Electronics 71V65803S100PFI synchronous SRAM, 9Mbit (512K x 18), 5 ns access time, 100 MHz clock, parallel interface, 3.135V–3.465V supply, industrial temp -40°C to 85°C, 100-TQFP (14x14 mm), Bulk.

$6.0Ref. price · indicative, final on quote
Packaging100-LQFP
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V65803S100PFI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.465V
Clock frequency100 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBulk
TechnologySRAM - Synchronous, SDR (ZBT)
Access time5 ns
Memory size9Mbit
Memory formatSRAM
Case100-LQFP
Memory organization512K x 18

Product details

9 Mbit ZBT SRAM — 5 ns access at 100 MHz

The 71V65803S100PFI is a 9 Mbit synchronous SRAM from Renesas organized as 512K x 18 bits, using Zero Bus Turnaround (ZBT) technology for back-to-back read/write cycles without dead cycles on the bus. 5 ns access time and 100 MHz clock frequency mean this part keeps up with a high-speed pipeline — the data appears on the bus within one clock edge of the address, no wait states needed for a 100 MHz memory controller.

Package and board-fit — 100-TQFP 14x14 mm

Supplied in a 100-lead TQFP (14x14 mm body, 0.50 mm pitch), surface-mount. The part draws its operating current from the Vdd pins; decouple with a 0.1 µF ceramic per supply pin close to the package.

The 3.3 V core logic holds timing over the full range.

Frequently asked questions

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