P2114AL4, SRAM - Asynchronous, 4Kbit (1K x 4), Parallel interface, 200 ns access, 4.5V ~ 5.5V supply, -55°C to 125°C, Through Hole 18-DIP, Bulk.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting type | Through Hole |
| Voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -55°C ~ 125°C (TA) |
| Package | Bulk |
| Technology | SRAM - Asynchronous |
| Access time | 200 ns |
| Memory size | 4Kbit |
| Memory format | SRAM |
| Case | 18-DIP |
| Memory organization | 1K x 4 |
| Write cycle time - word, page | 200ns |
The P2114AL4 is a 4Kbit asynchronous SRAM organized as 1K x 4 bits, in a through-hole 18-DIP package. It runs on a 4.5 V to 5.5 V supply and delivers a 200 ns access time.
200 ns is the read-access and write-cycle time. The write cycle time (200 ns) matches the read, so there is no asymmetry penalty.
There is no pin-compatible second source or official replacement listed for the P2114AL4. The N28F512200 is a 512Kbit Flash memory in a surface-mount package — different technology, footprint, and voltage range; it is not a functional equivalent.
The operating temperature range is -55 °C to 125 °C (TA), which is the full military temperature grade. Storage temperature is not separately specified in the listing.