Infineon Technologies CY7C1011DV33-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1011DV33-10ZSXI Cypress SRAM, 2Mbit, 10 ns, 44-TSOP

MPN CY7C1011DV33-10ZSXI
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

Cypress CY7C1011DV33-10ZSXI, asynchronous SRAM, 2Mbit (128K x 16), parallel interface, 10 ns access time, 3 V to 3.6 V supply, -40°C to 85°C, 44-TSOP II, Tray.

In Stock: 1,219 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$5.67 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$5.67
10+ pcs
$5.10
30+ pcs
$4.65
100+ pcs
$4.20
500+ pcs
$3.91
1,000+ pcs
$3.69
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$5.67 / ea

1,219 in stock — maximum per order · 3–4 days lead time

$5.10 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supply Voltage 3V ~ 3.6V
Memory / RAM 2Mbit

Full Technical Specifications

13 Parameters
CY7C1011DV33-10ZSXI specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size2Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization128K x 16
Write cycle time - word, page10ns
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[02] Industrial Packaging Tape & Reel / Tray / Tube

Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.

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Technical Details & Description

2 Mbit asynchronous SRAM for industrial bus buffers

The Cypress CY7C1011DV33-10ZSXI is a 2 Mbit asynchronous SRAM organized as 128K x 16 bits, with a parallel interface and a 10 ns access time. It operates from a 3 V to 3.6 V supply and is rated over the industrial temperature range of -40°C to 85°C. Housed in a 44-TSOP II package, this part is a drop-in fit for high-speed cache, data buffers, and scratchpad memory in embedded systems, industrial controllers, and telecom line cards where deterministic read/write timing matters.

10 ns access time — timing margin for the bus

The 10 ns access time matches the write cycle time of 10 ns, allowing back-to-back read or write cycles without wait states.

Frequently asked questions

What is the access time of CY7C1011DV33-10ZSXI?

The access time is 10 ns, and the write cycle time is also 10 ns. This allows 100 MHz bus operation without wait states.

Is CY7C1011DV33-10ZSXI RoHS compliant?

No, this part is RoHS non-compliant. For a RoHS-compliant functional equivalent, consider the CY7C1011DV33-10BVXI, which uses the same die in a BGA package.

What parts are equivalent to CY7C1011DV33-10ZSXI?

The closest functional equivalent is the CY7C1011DV33-10BVXI — same 2 Mbit density, same 10 ns access time, same 128K x 16 organization, but in a 44-ball BGA package and RoHS compliant. For double the density in the same TSOP II footprint, the CY7C1041GE30-10ZSXI offers 4 Mbit (256K x 16) at 10 ns.

Where can I buy CY7C1011DV33-10ZSXI with stock?

This part is sourced to order; availability and pricing are confirmed at quote time.

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