The Infineon BFP540FESDH6327XTSA1 is an NPN silicon RF bipolar transistor designed for low-noise amplifier and oscillator stages up to C-band. Its 30 GHz transition frequency and 20 dB gain make it a fit for LNA front-ends in base stations, satellite receivers, and wireless infrastructure where noise figure matters — 0.9 dB typ at 1.8 GHz keeps the receive path sensitive. The 4-TSFP package with flat leads is a surface-mount footprint common in compact RF modules; store the reels dry — moisture-sensitive level is not stated, but standard MSL handling applies for a plastic SMD package.
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EIA-481 Standard
Infineon BFP540FESDH6327XTSA1 RF NPN Transistor, 30 GHz
MPN BFP540FESDH6327XTSA1
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Infineon BFP540FESDH6327XTSA1 NPN RF transistor, 30 GHz transition frequency, 20 dB gain, 0.9 dB noise figure at 1.8 GHz, 5 V Vce, 80 mA Ic, 250 mW max power, 4-TSFP package, surface mount.
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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case 4-SMD, Flat Leads
Full Technical Specifications
12 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 5V |
| Current - collector (Ic) | 80mA |
| DC current gain (hFE) (Min) @ ic, vce | 50 @ 20mA, 3.5V |
| Power - max | 250mW |
| Frequency - transition | 30GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 20dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 4-SMD, Flat Leads |
| Noise figure (dB typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
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Technical Details & Description
Frequently asked questions
Is BFP540FESDH6327XTSA1 obsolete?
No, this part is listed as Active in production. No discontinuation notice has been issued. It remains available for new designs and production replenishment.
What is the noise figure of BFP540FE?
The noise figure is 0.9 dB typical at 1.8 GHz, with a range of 0.9 dB to 1.4 dB across the band.
What is the gain of BFP540FESDH6327XTSA1?
The listed gain is 20 dB.
BFP540FESDH6327XTSA1
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