Analog Devices TSC428CBA+ — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
Analog Devices / Discrete Semiconductors

Analog Devices TSC428CBA+ Gate Driver, 1.5A, 8-SOIC

MPN TSC428CBA+
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Analog Devices TSC428CBA+ low-side gate driver, dual independent channels, 1.5A peak output, 4.5V-18V supply, 25ns typ rise/fall, 8-SOIC package, ROHS3 compliant.

In Stock: 100 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$7.00 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$7.00
10+ pcs
$6.30
30+ pcs
$5.74
100+ pcs
$5.18
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$7.00 / ea

100 in stock — maximum per order · 3–4 days lead time

$6.30 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supply Voltage 4.5V ~ 18V

Full Technical Specifications

13 Parameters
TSC428CBA+ specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel, P-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH0.8V, 2.4V
Current - peak output (Source, sink)1.5A, 1.5A
Operating temperature0°C ~ 70°C (TA)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)25ns, 25ns
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Technical Details & Description

1.5 A peak output, dual low-side driver for N/P-channel MOSFETs

The TSC428CBA+ is a dual-channel low-side gate driver from Analog Devices, designed to drive both N-channel and P-channel MOSFETs with a peak source and sink current of 1.5 A per channel.

Active lifecycle and compliance status

ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive, which simplifies regulatory acceptance for equipment sold into European markets.

Frequently asked questions

What gate types does TSC428CBA+ support?

It drives both N-channel and P-channel MOSFETs with independent inverting and non-inverting inputs per channel, offering flexibility for half-bridge or dual-switch topologies.

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