Skip to main content
Vishay General Semiconductor - Diodes Division 1N5817/54 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N5817/54

MPN1N5817/54
Obsolete
$5.7300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5817/54 specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)20 V
Voltage - forward (Vf) (Max) @ if450 mV @ 1 A
Current - reverse leakage @ vr1 mA @ 20 V
Current - average rectified1A
Operating temperature - junction-65°C~125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-204AL, DO-41, Axial