RB215T-60NZC9

ROHM Semiconductor

ROHM Semiconductor RB215T-60NZC9 Schottky diode, 1 Pair Common Cathode, 60 V Vr, 20 A per diode, 580 mV Vf, Fast Recovery <= 500 ns, TO-220-3 Full Pack, Through Hole, Tube.

ROHM Semiconductor RB215T-60NZC9
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Technical specifications

RB215T-60NZC9 specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)60 V
Voltage - forward (Vf) (Max) @ if580 mV @ 10 A
Current - reverse leakage @ vr600 µA @ 60 V
Current - average rectified (Io) (per diode)20A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack
Diode configuration1 Pair Common Cathode

Technical details

60 V, 20 A Schottky in a TO-220FN common-cathode pair

The RB215T-60NZC9 is a dual common-cathode Schottky diode from ROHM Semiconductor, rated for 60 V reverse voltage and 20 A average rectified current per diode. Housed in the TO-220FN full-pack through-hole package, the common-cathode configuration shares the thermal tab between both diodes — the single mounting surface simplifies heatsink attachment for a dual-output or center-tapped secondary rectifier. The 150°C maximum junction temperature and 600 µA reverse leakage at 60 V bias the thermal design toward keeping the case temperature below 125°C under continuous full load.

Switching speed and snubber budget

Listed as Fast Recovery <= 500 ns, > 200 mA — for a Schottky, the recovery charge is inherently low, but the 500 ns ceiling tells you the diode is not optimized for high-frequency switching above 100 kHz. In a 50-60 Hz line rectifier or a 20-50 kHz PFC boost stage, the recovery transient is short enough that the snubber RC can be a standard 10 nF / 10 Ω across each diode without excessive dissipation.

RB215T-60NZC9
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