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ROHM Semiconductor RB218NS-40TL — Discrete Semiconductors

ROHM RB218NS-40TL Schottky Diode, 40V, 20A, TO-263-3

MPNRB218NS-40TL
End of Life

ROHM Semiconductor RB218NS-40TL Schottky diode, 40 V reverse, 20 A average rectified per diode, 1 pair common cathode, TO-263-3 (D²Pak) surface mount, fast recovery <= 500 ns.

$1.58Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RB218NS-40TL specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if770 mV @ 10 A
Current - reverse leakage @ vr5 µA @ 40 V
Current - average rectified (Io) (per diode)20A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode

Product details

Package and board integration — TO-263-3 (D²Pak)

The RB218NS-40TL comes in a TO-263-3 (D²Pak) surface-mount package with a large exposed copper tab on the bottom.

Headline ratings — 40 V reverse, 20 A per diode

This is a dual Schottky rectifier in a common-cathode configuration, rated 40 V DC reverse maximum and 20 A average rectified current per diode. The common-cathode pair is wired for OR-ing or center-tapped full-wave rectification — the two anodes are independent, so each half of the pair handles its own rail or winding phase. Forward voltage is 770 mV maximum at 10 A per diode — that is the conduction loss at half the rated current. Reverse leakage is 5 µA at 40 V, which the manufacturer flags as 'SUPER LOW IR' — a meaningful advantage in battery-powered or standby circuits where leakage current drains the rail when the diode is blocking.

Switching speed and thermal limits

Classified as fast recovery (<= 500 ns, > 200 mA Io), though as a Schottky the switching speed is inherently limited by junction capacitance rather than stored charge — the recovery classification confirms it is suitable for switching frequencies in the tens to low hundreds of kHz without significant reverse-recovery losses. The TO-263-3 tab must be soldered to a sufficient copper area — a typical two-ounce copper pour of at least 600 mm² keeps the junction rise within safe margin at 20 A continuous per diode.

Frequently asked questions

What is RB218NS-40TL's listed speed classification?

The RB218NS-40TL is classified as fast recovery (<= 500 ns, > 200 mA Io). As a Schottky diode, the switching speed is limited by junction capacitance rather than stored charge, making it suitable for high-frequency rectification without significant reverse-recovery losses.