ROHM Semiconductor RB088T-60NZC9 — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
ROHM Semiconductor / Discrete Semiconductors

RB088T-60NZC9 Schottky Diode, 10A, 60V, TO-220FN

MPN RB088T-60NZC9
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ROHM Semiconductor RB088T-60NZC9 Schottky diode, 1 pair common cathode, 60 V reverse, 10 A average rectified per diode, 830 mV forward voltage, TO-220-3 Full Pack, tube.

In Stock: 920 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (11)
Package / Case TO-220-3 Full Pack
Speed / Frequency Fast Recovery =< 500ns, > 200mA (Io)

Full Technical Specifications

11 Parameters
RB088T-60NZC9 specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)60 V
Voltage - forward (Vf) (Max) @ if830 mV @ 5 A
Current - reverse leakage @ vr3 µA @ 60 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack
Diode configuration1 Pair Common Cathode
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Technical Details & Description

10 A per leg, 60 V blocking — the OR-ing and rail-protection workhorse

The RB088T-60NZC9 is a dual common-cathode Schottky rectifier from ROHM, rated 10 A average rectified current per diode at 60 V reverse voltage. Forward drop is 830 mV at 5 A — a reasonable trade-off for the ultra-low reverse leakage (3 µA at 60 V) that ROHM flags as the part's defining characteristic. In a TO-220FN full-pack (isolated tab) through-hole package, it bolts directly to a heatsink without an insulating pad — the tab is electrically isolated, so you can share a common heatsink across multiple devices in a bridge or OR-ing array without worrying about shorting the cathodes.

That is the absolute ceiling — the thermal design target should stay well below it. With 10 A per diode and 830 mV Vf at 5 A, conduction loss at full load is roughly 8.3 W per diode. The TO-220FN's junction-to-case thermal resistance (not listed here but typically 2–3°C/W for this package) determines how much heatsink you need to keep Tj under 125°C for reliability margin. The fast recovery spec (<500 ns at >200 mA) is characteristic of Schottky diodes — they are majority-carrier devices with no stored charge, so recovery is essentially instantaneous. The <500 ns figure confirms this is a standard-speed Schottky, not a hyper-fast SiC or GaN part. It handles 50/60 Hz line rectification and low-frequency switching without issue.

Active production, ROHS3 — sourcing posture

The common-cathode configuration in a single TO-220FN package saves board space and reduces part count compared to two discrete Schottkys. If your layout calls for a dual common-anode instead, that is a different ROHM order code — verify the pinout before committing the PCB.

Frequently asked questions

What is the reverse leakage current at 60 V?

Reverse leakage is 3 µA at the rated 60 V reverse voltage — ROHM markets this as 'super low IR', making it suitable for applications where standby power matters.

What package does RB088T-60NZC9 come in?

It ships in a TO-220-3 Full Pack (TO-220FN) through-hole package, supplied in tube. The tab is fully isolated, so no insulating washer is needed for heatsink mounting.

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