Taiwan Semiconductor Corporation S4M
MPNS4M
Active
DIODE GEN PURP 1KV 4A DO214AB
$0.76Ref. price · indicative, final on quote
PackagingDO-214AB, SMC
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.15 V @ 4 A |
| Current - reverse leakage @ vr | 10 µA @ 1000 V |
| Current - average rectified | 4A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | DO-214AB, SMC |
| Capacitance @ vr, | 60pF @ 4V, 1MHz |
| Reverse recovery time | 1.5 µs |