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Taiwan Semiconductor Corporation MUR360SBH

Taiwan Semiconductor Corporation MUR360SBH

MPNMUR360SBH
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DIODE GEN PURP 600V 3A DO214AA

$0.51Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUR360SBH specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 3 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
CaseDO-214AA, SMB
Capacitance @ vr,40pF @ 4V, 1MHz
Reverse recovery time50 ns