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Taiwan Semiconductor Corporation BC548B B1G — Discrete Semiconductors

Taiwan Semiconductor Corporation BC548B B1G

MPNBC548B B1G
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC548B B1G specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown30 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 5V
Power - max500 mW
Operating temperature-65°C~150°C(TJ)
PackageBulk
CaseTO-226-3, TO-92-3 (TO-226AA)