Taiwan Semiconductor Corporation BC337-16 B1G
MPNBC337-16 B1G
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 45 V |
| Current - collector (Ic) | 800 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 100 @ 100mA, 5V |
| Power - max | 625 mW |
| Frequency - transition | 100MHz |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vce saturation (Max) @ ib, ic | 700mV @ 50mA, 500mA |