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Taiwan Semiconductor Corporation BC337-16 A1G — Discrete Semiconductors

Taiwan Semiconductor Corporation BC337-16 A1G

MPNBC337-16 A1G
Obsolete
$0.3700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC337-16 A1G specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)800 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 5V
Power - max625 mW
Frequency - transition100MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA