Skip to main content
Log in
STMicroelectronics STPS30M100SFP — Discrete Semiconductors

STPS30M100SFP Schottky Diode, 100 V, 30 A, TO-220FPAB

MPNSTPS30M100SFP
Active

STMicroelectronics STPS30M100SFP Schottky diode, 100 V reverse voltage, 30 A average rectified current, 800 mV forward voltage at 30 A, TO-220-3 Full Pack, through hole.

$1.5200Ref. price · indicative, final on quote
STMicroelectronics STPS30M100SFP datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPS30M100SFP specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if800 mV @ 30 A
Current - reverse leakage @ vr175 µA @ 100 V
Current - average rectified30A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack

Product details

100 V, 30 A Schottky in a TO-220 Full Pack

The STPS30M100SFP is a 100 V, 30 A Schottky rectifier from STMicroelectronics in the TO-220 Full Pack (TO-220FPAB) through-hole package.

30 A average, 100 V blocking — the power-stage fit

Rated for 30 A average rectified current (Io) with a 100 V DC reverse voltage maximum. The 175 µA reverse leakage at 100 V is specified at the rated blocking voltage — expect leakage to rise with junction temperature, so the thermal design should account for the leakage contribution at the 150 °C maximum junction temperature. Classified as Fast Recovery (≤ 500 ns, > 200 mA Io), though as a Schottky the switching speed is inherently faster than a fast-recovery pn diode — the recovery charge is negligible, making it suited for high-frequency rectification in switch-mode power supplies and output stages.