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M24C64T-FCU6T-TF

STMicroelectronics M24C64T-FCU6T/TF EEPROM, 64Kbit I²C, 1 MHz, Obsolete

MPNM24C64T-FCU6T/TF
Obsolete

STMicroelectronics M24C64T-FCU6T/TF, 64Kbit I²C EEPROM, 1 MHz clock, 650 ns access, 1.7V-5.5V, 4-WLCSP (0.85x0.85), -40°C to 85°C.

$0.6800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

M24C64T-FCU6T/TF specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.7V ~ 5.5V
Clock frequency1 MHz
Memory interfaceI²C
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyEEPROM
Access time650 ns
Memory size64Kbit
Memory formatEEPROM
Case4-XFBGA, WLCSP
Memory organization8K x 8
Write cycle time - word, page5ms

Product details

It operates from 1.7 V to 5.5 V, supports a 1 MHz clock rate, and delivers a 650 ns access time. The part comes in a 4-ball WLCSP measuring 0.85 x 0.85 mm, rated for -40°C to 85°C industrial temperature range. This is a non-volatile memory intended for parameter storage, calibration data, or small firmware patches in space-constrained embedded designs.

At 1 MHz I²C, the 650 ns access time is the time from the address match to the first data bit being available on the bus. The 5 ms write cycle time per word or page is typical for EEPROM — firmware must poll the acknowledge polling or insert a delay after each write.

Frequently asked questions

What is the closest pin-compatible alternative to M24C64T-FCU6T/TF?

No pin-compatible alternative is listed in the available records. The M24C64 series remains active in other packages, but the 4-WLCSP (0.85x0.85) footprint is unique to this variant — any replacement would require a board layout change.

What is M24C64T-FCU6T/TF's listed package?

The part is supplied in Tape & Reel (TR) or Cut Tape (CT) and packaged in a 4-XFBGA, WLCSP with a supplier device package of 4-WLCSP (0.85x0.85).

What is M24C64T-FCU6T/TF's listed technology?

It is an EEPROM (Electrically Erasable Programmable Read-Only Memory) using non-volatile memory technology.