ICBOMS

onsemi — Memory (DRAM / SRAM / Flash / EEPROM)

Turnkey BOM procurement and spot-buy shortage sourcing for onsemi Memory (DRAM / SRAM / Flash / EEPROM) — 75 part numbers with specifications and datasheets. Filter

Package / Case
TO-204AA, TO-3 · TO-226-3, TO-92-3 (TO-226AA) Formed Leads · 6-DIP (0.300", 7.62mm) · 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package
TO-204 (TO-3) · TO-92-3 · 6-DIP · 20-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 4V · 100 @ 150mA, 1V · 80 @ 10mA, 5V · 100 @ 150mA, 2V
Power - Max
115 W · 625 mW · 1 W · 300 mW
Vce Saturation (Max) @ Ib, Ic
3V @ 3.3A, 10A · 750mV @ 50mA, 500mA · 200mV @ 5mA, 50mA · 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60 V · 40 V · 160 V · 80 V
Operating Temperature
-65°C ~ 200°C (TJ) · -55°C ~ 150°C (TJ) · -40°C ~ 100°C · -40°C ~ 85°C (TA)
Current - Collector (Ic) (Max)
15 A · 600 mA · 1 A · 100 mA

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