NXP Semiconductors BFU520WX — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
NXP Semiconductors / Memory (DRAM / SRAM / Flash / EEPROM)

BFU520WX NXP RF NPN Transistor, 10 GHz, 18.5 dB Gain

MPN BFU520WX
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

NXP Semiconductors BFU520WX Automotive AEC-Q101 RF NPN transistor, 12V, 10GHz, 18.5dB gain, 0.6dB noise figure, SC-70 SOT-323 package.

In Stock: 1,580 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.46 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.46
10+ pcs
$0.41
30+ pcs
$0.38
100+ pcs
$0.34
500+ pcs
$0.32
1,000+ pcs
$0.30
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$0.46 / ea

1,580 in stock — maximum per order · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case SC-70, SOT-323

Full Technical Specifications

13 Parameters
BFU520WX specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown12V
Current - collector (Ic)30mA
DC current gain (hFE) (Min) @ ic, vce60 @ 5mA, 8V
Power - max450mW
Frequency - transition10GHz
Operating temperature-40°C ~ 150°C (TJ)
Gain18.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Noise figure (dB typ @ f)0.6dB @ 900MHz
Series Sibling Variants

NXP Semiconductors Automotive, AEC-Q101 Series Models

Sibling variants, package options, and speed/density grades in this NXP Semiconductors semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

Active production, automotive-qualified RF transistor

The BFU520WX: With a 10 GHz transition frequency and 0.6 dB noise figure at 900 MHz, it is designed for low-noise amplifier stages in automotive RF front-ends, GPS receivers, and ISM-band radios up to the UHF range. The 18.5 dB gain at the collector current bias point gives enough headroom to lift a weak antenna signal to a usable level before the mixer stage, reducing the cascaded noise figure of the receiver chain.

Parametric fit for RF front-end designs

Rated for 12 V collector-emitter breakdown and 30 mA maximum collector current, the BFU520WX suits low-power LNA and driver stages where the supply rail is 3.3 V or 5 V, with the 450 mW power dissipation limiting the bias point in the SC-70 package. The minimum DC current gain of 60 at 5 mA, 8 V ensures consistent bias across the temperature range from -40°C to 150°C, which is the full automotive Grade 1 ambient band for under-hood or engine-bay modules. Housed in the SC-70 (SOT-323) surface-mount package, the part fits compact RF modules where board space is tight and the collector pad can be tied to the ground plane for thermal relief.

Compliance and sourcing posture

The BFU520WX is ROHS3 compliant and carries the AEC-Q101 automotive qualification, meaning it has passed the stress tests and reliability screening required for automotive-grade discrete semiconductors. Available in Tape & Reel or Cut Tape packaging, this part is quoted to order against BOM quantities through independent distribution channels, with current pricing and lead time confirmed at the time of RFQ.

Frequently asked questions

What compliance documentation does NXP Semiconductors provide for BFU520WX?

The BFU520WX is ROHS3 compliant and qualified to AEC-Q101, the automotive discrete semiconductor reliability standard. NXP provides the standard compliance documentation package including the REACH declaration upon request.

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