NXP BFU630F,115 NPN RF transistor, 5.5V Vce, 21GHz fT, 30mA Ic, 200mW, SOT-343F surface-mount package, ROHS3 compliant.
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 5.5V |
| Current - collector (Ic) | 30mA |
| DC current gain (hFE) (Min) @ ic, vce | 90 @ 5mA, 2V |
| Power - max | 200mW |
| Frequency - transition | 21GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 13dB ~ 22.5dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-343F |
| Noise figure (dB typ @ f) | 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz |
Factory lead times blocking production? We lock verified brand-new original stock in Shenzhen within 2 hours.
Direct access to Shenzhen floor inventory, franchised allocation buffers, and factory bonded stock to resolve line-down shutdowns.
Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.
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SOT-343F surface-mount package, also designated as 4-DFP by the supplier.
DC current gain (hFE) is specified at 90 minimum at a collector current of 5 mA and a collector-emitter voltage of 2 V.
Yes, the BFU630F,115 is available in Tape & Reel (TR) as well as Cut Tape (CT) options, suitable for both volume pick-and-place and prototype runs.
Yes. The noise figure is specified at 1.3 dB typ at 5.8 GHz, and the 21 GHz fT provides enough gain headroom for LNA and driver stages in the 5.8 GHz band.