What this 3-phase gate driver brings to the board
The Infineon IR2130STRPBF is a three-phase half-bridge gate driver designed to drive IGBTs and N-channel power MOSFETs in inverter and motor-drive stages. It packs six gate-drive outputs configured as three independent half-bridge channels, each with a floating high-side driver rated for a bootstrap supply up to 600 V. The peak output current is 250 mA source, 500 mA sink — enough to switch common industrial IGBT modules and discrete MOSFETs in the 10 A to 50 A range without excessive gate rise time. Supply voltage spans 10 V to 20 V, matching standard 15 V bias rails found in variable-frequency drives, servo amplifiers, and uninterruptible power supplies.
Key specs that decide the fit
The 600 V high-side bootstrap voltage is the hard ceiling for the DC bus voltage the driver can float on — if your inverter rail is 400 VDC or 480 VAC rectified, this part has the headroom. The 250 mA source / 500 mA sink peak output drives the gate charge of typical IGBTs and MOSFETs; expect rise and fall times around 80 ns and 35 ns respectively, which keeps switching losses manageable in the 10–20 kHz range. The logic inputs accept standard CMOS/TTL levels with a VIH of 2.2 V and VIL of 0.8 V, so a 3.3 V or 5 V microcontroller can drive it directly — no level shifter needed. The inverting input type means the outputs are the complement of the input signal; plan your firmware PWM polarity accordingly.
The 28-SOIC wide-body package with 0.295-inch body width and 7.50 mm footprint is a common outline for high-voltage gate drivers; it provides adequate creepage for the 600 V rating when the PCB layout follows standard clearance rules.
There is no official pin-compatible replacement listed in the Infineon gate-driver family, so if you are qualifying this part for a new design, lock in the supply channel early.