Infineon Technologies S29GL01GT11FHV010 — Memory (DRAM / SRAM / Flash / EEPROM)
Technical Documents PDF / CAD
RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S29GL01GT11FHV010 1Gbit Parallel Flash, 110ns

MPN S29GL01GT11FHV010
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon Technologies GL-T series Parallel NOR Flash, S29GL01GT11FHV010, 1Gbit, 128M x 8, 110 ns access, 2.7 V, -40 to +105°C, 64-FBGA, Tray.

Factory Allocation · Direct Sourcing
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Wholesale Ref. Price (USD)
Target Price / Quote (2h Fast Turnaround)
Formal B2B Quotation in 2h
Volume pricing applies from 1,000 pcs upward, and is confirmed per order against the quantity and the shipment date. Inquire for Target Qty →
Working on a production BOM or have a target unit price? Submit Target Price
[SPEC] Essential Parameters Snapshot Full Specifications (13)
Supply Voltage 2.7

Full Technical Specifications

13 Parameters
S29GL01GT11FHV010 specifications
Parameter / AttributeSpecification / Value
SeriesGL-T
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 105°C (TA)
Frame_size1Gbit
Access time110 ns
Memory typeNon-Volatile
Package_typeTray
Memory formatFLASH
StatusActive
Supply voltage2.7
Memory organization128M x 8
Write cycle time - word, page60ns
[DESK] Shenzhen Spot Allocation · 2h Response

Need Immediate Spot Stock or Shortage Allocation for S29GL01GT11FHV010?

Factory lead times blocking production? We lock verified brand-new original stock in Shenzhen within 2 hours.

Quote SLA 2 Hours
[01] Emergency Shortage 24-48h Shenzhen Dispatch

Direct access to Shenzhen floor inventory, franchised allocation buffers, and factory bonded stock to resolve line-down shutdowns.

[02] Industrial Packaging Tape & Reel / Tray / Tube

Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.

[03] WhatsApp QC Proof 45x Microscope QC Photos

High-resolution photos of original reel labels, 2D DataMatrix, and pin coplanarity sent via WhatsApp/Telegram before you release wire payment.

● USD Wire Transfer (SWIFT T/T) · DAP Express / DDP Delivery

Technical Details & Description

1 Gbit parallel NOR Flash for code-shadowing and data-logging

The Infineon S29GL01GT11FHV010 is a 1 Gbit parallel NOR Flash memory from the GL-T series, organized as 128M x 8 bits. This density suits firmware storage for embedded systems requiring fast random-read performance — NOR Flash supports execute-in-place (XIP) code shadowing, eliminating the need to copy code to RAM before execution. The 110 ns access time means the processor's memory controller can read the first instruction within a single bus cycle at typical embedded clock rates.

Active production with industrial temperature qualification

The 2.7 V supply rail allows operation from a 3.3 V bus with margin for brownout conditions, or from a regulated 2.8 V rail in low-power designs. The parallel interface provides deterministic read timing without the protocol overhead of serial Flash — important for real-time boot sequences where every microsecond of latency matters.

64-ball FBGA footprint and board integration

Supplied in a 64-ball FBGA package on tray, surface-mount.

Frequently asked questions

What is the S29GL01GT11FHV010's memory organization and access time?

It is organized as 128M x 8 bits (1 Gbit total) with a 110 ns initial access time and a 60 ns write cycle time for word and page operations. The parallel interface provides deterministic read latency suitable for code shadowing and real-time boot applications.

S29GL01GT11FHV010
Verified Allocation
Quote