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IPP040N08NF2SAKMA1 - Infineon Technologies
MPN IPP040N08NF2SAKMA1
End of Life
Spot Stock · 24-48h Dispatch
100% Original Sealed
TRENCH 40<-<100V
In Stock: 822 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$2.38 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$2.38
10+ pcs
$2.14
30+ pcs
$1.95
100+ pcs
$1.76
500+ pcs
$1.64
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-220-3
Output / Current 80 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | StrongIRFET™ 2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Ta), 115A (Tc) |
| Power dissipation | 3.8W (Ta), 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.8V @ 85µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3800 pF @ 40 V |
Series Sibling Variants
Infineon Technologies StrongIRFET™ 2 Series Models
Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
IPA082N10NF2SXKSA1
Infineon Technologies StrongIRFET™ 2 N-Channel MOSFET, IPA082N10NF2SXKSA1, 100 V Vdss, 46 A Id, 8.2 mOhm Rds(on), PG-TO220 Full Pack, Through Hole, Tube.
View Availability & Specs
IPB016N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3
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IPB043N10NF2SATMA1
Infineon StrongIRFET™ 2, N-Channel MOSFET, 100V Vdss, 4.35mOhm Rds(on) at 80A, 10V, 135A continuous drain current at Tc, PG-TO263-3, -55°C to 175°C junction temperature.
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IPB050N10NF2SATMA1
Infineon Technologies StrongIRFET™ 2 N-Channel MOSFET, 100 V Vdss, 103 A Id, 5.05 mOhm Rds(on), PG-TO263-3, Tape & Reel.
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IPD055N08NF2SATMA1
Infineon StrongIRFET™ 2, N-Channel MOSFET, 80 V, 98 A (Tc), 5.5 mOhm at 60 A, 10 V, TO-252-3 (DPak), -55 to 175 °C.
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IPF016N10NF2SATMA1
TRENCH >=100V
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IPP040N08NF2SAKMA1
Verified Allocation