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Infineon Technologies IPI80N03S4L-03

IPI80N03S4L-03 - Infineon Technologies

MPNIPI80N03S4L-03
End of Life

N-CHANNEL POWER MOSFET

$0.6Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPI80N03S4L-03 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id2.2V @ 90µA
Rds on (Max) @ id, vgs2.7mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9750 pF @ 25 V