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Infineon Technologies IPI320N203G

IPI320N203G - Infineon Technologies

MPNIPI320N203G
End of Life

N-CHANNEL POWER MOSFET

$1.73Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSNot applicable
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPI320N203G specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs32mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2350 pF @ 100 V