IPD5N25S3430ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPD5N25S3430ATMA1, N-Channel MOSFET, 250 V Vdss, 5 A Id, 430 mOhm Rds(on) @ 5 A, 10 V, PG-TO252-3-313, AEC-Q101, -55°C to 175°C.

Infineon Technologies IPD5N25S3430ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD5N25S3430ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 13µA
Rds on (Max) @ id, vgs430mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs6.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds422 pF @ 25 V

Infineon Technologies OptiMOS™ Series

Technical details

The IPD5N25S3430ATMA1: The 175°C ceiling is the key parameter for under-hood or engine-bay environments where ambient temperatures can exceed 125°C — the derating curve for continuous current must be applied above 25°C, but the headroom to 175°C allows the part to survive load-dump and short-circuit transients that would push a 150°C-rated MOSFET out of its SOA.

Switching performance and gate drive requirements

Total gate charge is 6.2 nC at 10 V, and input capacitance is 422 pF at 25 V drain-source. The 10 V drive voltage for rated Rds(on) is compatible with most automotive gate-driver ICs.

Package and mounting — TO-252 (DPak)

Supplied in a PG-TO252-3-313 package, which is the standard DPak (TO-252) footprint with a single exposed drain tab.

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