30 V N-channel in a CanPAK — what the ratings mean for the BOM
The Infineon BSB053N03LPG is a single N-channel power MOSFET from the OptiMOS™ series, built on a metal-oxide semiconductor trench process. The Rds(on) is 5.3 mOhm at 30 A and 10 V gate drive; the drain-source rating is 30 V. The 3-WDSON package is a surface-mount, leadless footprint that keeps source inductance low. The gate charge is 29 nC at 10 V; the drive voltage range is 4.5 V and 10 V.
Active lifecycle — no LTB watch needed
The BSB053N03LPG carries an Active lifecycle status, meaning Infineon continues to manufacture it as a current-production part. There is no last-time-buy risk on the horizon, and no official successor has been designated. For a procurement planner, this part qualifies for new-design insertion without a near-term end-of-life contingency. ROHS3 compliance is confirmed, so it meets the EU RoHS exemption regime for lead-free soldering processes.
