60 V, 2.8 mOhm — the conduction-loss floor
The Infineon BSB028N06NN3GXUMA1 is an N-channel OptiMOS power MOSFET rated for 60 V drain-source breakdown and a continuous drain current of 90 A at the case (Tc) or 22 A at ambient (Ta).
Gate charge and switching budget
Total gate charge is 143 nC at Vgs = 10 V, with an input capacitance of 12000 pF at Vds = 30 V. The 2.2 W maximum dissipation at ambient (Ta) versus 78 W at the case (Tc) tells the layout engineer that the thermal path through the CanPAK M package's large solder pad is the primary heat-removal route; the PCB copper area under the pad sets the real junction temperature.
Package and thermal interface
The MG-WDSON-2 CanPAK M package is a surface-mount design with a large exposed drain pad for soldering directly to the PCB copper. The supplier device package is MG-WDSON-2, CanPAK M — the footprint requires a solder-paste stencil aperture that covers most of the pad area to achieve the rated 78 W power dissipation at the case.
Lifecycle and compliance
It is ROHS3 compliant.