Infineon Technologies StrongIRFET™ 2 N-Channel MOSFET, 100 V Vdss, 103 A Id, 5.05 mOhm Rds(on), PG-TO263-3, Tape & Reel.
| Parameter | Value |
|---|---|
| Series | StrongIRFET™ 2 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 103A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ id | 3.8V @ 85µA |
| Rds on (Max) @ id, vgs | 5.05mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 76 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3600 pF @ 50 V |
The IPB050N10NF2SATMA1: Input capacitance Ciss is 3600 pF at 50 V Vds — this sets the switching energy per transition and the driver's peak current requirement. The 150 W maximum power dissipation at the case (Tc) defines the thermal budget; a heatsink or airflow is needed to stay below the 175 °C junction limit at full load.
ROHS3 compliant per Infineon's declaration — no restricted substances above the threshold limits.
The part is ROHS3 compliant. Infineon's standard documentation package includes the RoHS declaration and material composition data; no UL or IEC certification is listed in the product record.