Infineon Technologies IMD700AQ064X128AAXUMA1 — Power Management (PMIC / Gate Driver)
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Infineon Technologies / Power Management (PMIC / Gate Driver)

Infineon IMD700AQ064X128AAXUMA1 MOTIX™ 3-Phase Gate Driver

MPN IMD700AQ064X128AAXUMA1
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon Technologies MOTIX™ series, 3-Phase N-Channel MOSFET gate driver, IMD700AQ064X128AAXUMA1, 1.5A peak output, 5.5V-60V supply, PG-VQFN-64-8 package.

In Stock: 64 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$3.52 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$3.52
10+ pcs
$3.43
30+ pcs
$3.37
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$3.52 / ea

64 in stock — maximum per order · 3–4 days lead time

$3.43 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 64-WFQFN Exposed Pad
Supply Voltage 5.5V ~ 60V

Full Technical Specifications

13 Parameters
IMD700AQ064X128AAXUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesMOTIX™
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel type3-Phase
MountingSurface Mount
Supply voltage5.5V ~ 60V
Logic voltage - VIL, VIH1.045V, 3.85V
Current - peak output (Source, sink)1.5A, 1.5A
Operating temperature-40°C ~ 115°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case64-WFQFN Exposed Pad
Number of drivers3
Driven configurationHalf-Bridge
Series Sibling Variants

Infineon Technologies MOTIX™ Series Models

Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

MOTIX™ 3-phase gate driver in a 64-VQFN

The Infineon IMD700AQ064X128AAXUMA1 is a 3-phase N-channel MOSFET gate driver from the MOTIX™ series, designed to drive half-bridge configurations in a compact 64-WFQFN exposed pad package (PG-VQFN-64-8).

Switching-loss budget and SOA fit

The 1.5 A peak source/sink current determines the gate charge delivery rate — for a 60 nC MOSFET gate, the driver charges it in roughly 40 ns, setting the minimum transition time and thus the switching loss per edge.

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