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IDB18E120

Infineon IDB18E120 Diode, 1.2 kV 31 A Fast Recovery

MPNIDB18E120
End of Life

Infineon IDB18E120 standard fast-recovery diode, 1200 V DC reverse voltage, 31 A average rectified, 195 ns reverse recovery time, 14-TSSOP surface-mount package, -55°C to 150°C junction temperature.

$1.05Ref. price · indicative, final on quote
Infineon Technologies IDB18E120 datasheet (PDF)
Packaging14-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDB18E120 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.15 V @ 18 A
Current - reverse leakage @ vr100 µA @ 1200 V
Current - average rectified31A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
Case14-TSSOP (0.173\", 4.40mm Width)
Reverse recovery time195 ns

Product details

It comes in a 14-TSSOP surface-mount package and operates over a -55°C to 150°C junction temperature range. This class of diode is used in power-supply output rectification, freewheeling diodes in motor drives, and snubber circuits where fast turn-off reduces switching losses. The 14-TSSOP footprint keeps the board layout compact, but at 31 A the PCB copper area must be sized for thermal spreading — the package alone won't sink that current without a decent pour.

The 195 ns trr qualifies as fast recovery (under 500 ns at >200 mA). In a hard-switched converter, that recovery time sets the turn-off loss and the ringing amplitude.

Frequently asked questions

What is the reverse recovery time of IDB18E120?

The reverse recovery time (trr) is 195 ns, which qualifies as fast recovery (under 500 ns at >200 mA). This determines turn-off loss and ringing in switching applications.