Infineon Technologies CY7C1668KV18-550BZXC — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1668KV18-550BZXC 144Mbit SRAM, 550 MHz

MPN CY7C1668KV18-550BZXC
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Infineon CY7C1668KV18-550BZXC, DDR II+ synchronous SRAM, 144Mbit, 8M x 18 organization, 550 MHz parallel interface, 1.7 V supply, 165-LBGA, 0°C to 70°C, tray.

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Supply Voltage 1.7V ~ 1.9V
Speed / Frequency 550 MHz
Memory / RAM 144Mbit

Full Technical Specifications

12 Parameters
CY7C1668KV18-550BZXC specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency550 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 18
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Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.

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Technical Details & Description

550 MHz DDR II+ SRAM — what the clock rate buys you

The Infineon CY7C1668KV18-550BZXC is a 144Mbit synchronous SRAM using DDR II+ architecture, organized 8M x 18, clocked at 550 MHz over a parallel interface.

Package and mounting constraints

Surface-mount reflow with controlled profile is expected; no socket option exists for this package. The ball map is specific to the 18-bit-wide DDR II+ interface — verify the layout against your PCB footprint before committing the board spin.

Frequently asked questions

What compliance documentation is available for CY7C1668KV18-550BZXC?

The part is listed as RoHS-compliant per Infineon's standard declaration. Specific REACH or UL documentation should be requested at quote time; no additional certs are cited in the product record.

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