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Infineon Technologies CY7C10612G30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C10612G30-10ZSXI 16Mbit Async SRAM, 10 ns

MPN CY7C10612G30-10ZSXI
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

Cypress CY7C10612G30-10ZSXI, 16Mbit asynchronous SRAM, 1M x 16 organization, 10 ns access time, parallel interface, 3V to 3.6V supply, -40°C to 85°C, 54-TSOP II package, Tray.

In Stock: 432 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$20.04 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$20.04
10+ pcs
$18.04
30+ pcs
$16.43
100+ pcs
$14.83
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$20.04 / ea

432 in stock — maximum per order · 3–4 days lead time

$18.04 / ea from 10 pcs
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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP
[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supply Voltage 3V ~ 3.6V
Memory / RAM 16Mbit

Full Technical Specifications

13 Parameters
CY7C10612G30-10ZSXI specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns
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[02] Industrial Packaging Tape & Reel / Tray / Tube

Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.

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Technical Details & Description

16 Mbit async SRAM for the bus-timing crowd

The Cypress CY7C10612G30-10ZSXI is a 16 Mbit asynchronous SRAM organized as 1M x 16 bits, with a 10 ns access time and a parallel interface. It operates from a single 3V to 3.6V supply and is rated for the industrial temperature range of -40°C to 85°C. This is a volatile memory part — data is retained only while power is applied — so it fits applications like processor cache, packet buffers, or data-acquisition scratchpad where fast, deterministic read/write cycles matter more than non-volatility.

10 ns access — what it buys you

Supply and temperature — the fit check

The 3V to 3.6V supply range covers a nominal 3.3V rail. The part is ROHS3 compliant.

Frequently asked questions

What is the exact memory organization of CY7C10612G30-10ZSXI?

The memory is organized as 1M words by 16 bits (1M x 16), giving a total of 16 Mbits.

Is CY7C10612G30-10ZSXI RoHS compliant?

Yes, it is ROHS3 compliant, meeting the EU RoHS directive for lead-free manufacturing.

What is the access time of CY7C10612G30-10ZSXI?

The access time is 10 ns, and the write cycle time (word or page mode) is also 10 ns.

Does CY7C10612G30-10ZSXI require a specific voltage regulator?

It operates from a 3V to 3.6V supply, so a standard 3.3V rail with reasonable regulation (±5%) is sufficient. No special low-noise regulator is required for typical operation.

Where can I buy CY7C10612G30-10ZSXI?

This part is sourced to order. Availability and pricing are confirmed at quote time.

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