Infineon CY7C1021B-12ZXC, asynchronous SRAM, 1Mbit (64K x 16), 12 ns access time, parallel interface, 4.5 V to 5.5 V supply, 0°C to 70°C, 44-TSOP II package, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | 0°C~70°C(TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 1Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 64K x 16 |
| Write cycle time - word, page | 12ns |
The CY7C1021B-12ZXC: Access time is 12 ns. Write cycle time is also 12 ns.
This part is marked obsolete by Infineon. No factory orders remain. We source it through independent distribution and quote to order against an RFQ.
Yes, CY7C1021B-12ZXC is obsolete per Infineon. It is no longer in factory production. We source it through independent distribution; availability is confirmed at quote time against an RFQ.
There is no official Infineon successor listed for this exact code. For a production alternative, look for a pin-compatible 5 V async SRAM in 44-TSOP II with 64K x 16 organization and 12 ns or faster access time from another vendor. We can help source surplus inventory of this part or cross-reference candidates — submit an RFQ.
The supply voltage range is 4.5 V to 5.5 V — a 5 V nominal part. It is not compatible with 3.3 V or lower voltage buses without level shifters.
It is 1 Mbit total, organized as 64K words by 16 bits. The memory interface is parallel, asynchronous.