Infineon CY7C1020D-10ZSXI, 512Kbit Asynchronous SRAM, 32K x 16, 10 ns access time, Parallel interface, 4.5V-5.5V supply, -40°C to 85°C, 44-TSOP II, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 512Kbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 32K x 16 |
| Write cycle time - word, page | 10ns |
The 10 ns access time and 10 ns write cycle time set the timing budget for address-to-data valid and write pulse width. The 32K x 16 organization provides a 16-bit wide data path.
It is ROHS3 compliant. Sourcing is through independent distribution; an RFQ confirms availability and pricing.
The closest density sibling is the CY7C1021D-10ZSXI, a 1Mbit (64K x 16) version in the same 44-TSOP II package with identical 10 ns access time and 5V supply. For higher density, the CY7C1041GN-10ZSXI offers 4Mbit (256K x 16) in the same package and speed grade.
The pinout follows the standard 44-TSOP II footprint for 32K x 16 asynchronous SRAM. Address lines A0-A14, data lines DQ0-DQ15, chip enable, output enable, and write enable pins are arranged per the industry-standard JEDEC pinout for this density and package.
The suffix 'XI' indicates industrial temperature range (-40°C to 85°C) and ROHS compliance. The 'ZRI' variant typically denotes a different lead finish or packaging option; the electrical specifications (512Kbit, 10 ns, 5V) are identical. Verify the specific datasheet revision for exact differences in moisture sensitivity level or tape-and-reel packaging.