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Infineon Technologies CY621472E30LL-45ZSXIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY621472E30LL-45ZSXIT Infineon MoBL SRAM, 4Mbit, 45 ns

MPNCY621472E30LL-45ZSXIT
Active

Infineon MoBL® SRAM, 4Mbit, Parallel, 45 ns, 2.2 V, 256K x 16, -40°C to 85°C, 44-TSOP II, Tape & Reel.

$1.96Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY621472E30LL-45ZSXIT specifications
ParameterValue
SeriesMoBL®
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 85°C (TA)
Frame_size4Mbit
Access time45 ns
Memory typeVolatile
Package_typeTape & Reel (TR)
Memory formatSRAM
StatusActive
Supply voltage2.2
Memory organization256K x 16
Write cycle time - word, page45ns

Product details

Device identity and memory architecture

The CY621472E30LL-45ZSXIT is a 4 Mbit MoBL® SRAM from Infineon, organized as 256K x 16 bits with a parallel interface. The 45 ns access time and 45 ns write cycle time (word, page) set the bus timing for read and write operations — the address-to-data valid window is 45 ns max, so the controller must meet this setup/hold window at the memory interface. Operating from a 2.2 V supply rail, the device targets low-power standby and battery-backed applications where the system bus runs at 3.3 V or lower.

Housed in a 44-pin TSOP II package (surface mount), the 0.8 mm pitch and standard JEDEC footprint map directly onto a two-layer PCB without via-in-pad.

Lifecycle status and supply posture

Infineon lists the CY621472E30LL-45ZSXIT as an active product — the manufacturer continues to support new designs and production.

Frequently asked questions

How can I order CY621472E30LL-45ZSXIT and get a quote?

Submit an RFQ through this listing.