Infineon BFP740FH6327XTSA1 NPN RF transistor, 42 GHz fT, 27.5 dB gain, 0.5 dB noise figure at 1.8 GHz, 4.7 V Vceo, 30 mA Ic, 160 mW max power, 4-TSFP surface-mount package.
| Parameter | Value |
|---|---|
| Mounting type | Surface Mount |
| Transistor type | NPN |
| Voltage - collector emitter breakdown | 4.7V |
| Current - collector (Ic) | 30mA |
| DC current gain (hFE) (Min) @ ic, vce | 160 @ 25mA, 3V |
| Power - max | 160mW |
| Frequency | 42GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 27.5dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 4-SMD, Flat Leads |
| Noise figure (dB typ @ f) | 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz |
Noise figure is specified as 0.5 dB to 0.75 dB across 1.8 GHz to 6 GHz.
Infineon lists the BFP740FH6327XTSA1 as Active. No last-time-buy notice, no end-of-life forecast in the current record. The part is RoHS3 compliant.
The noise figure is specified as 0.5 dB to 0.75 dB across the frequency range of 1.8 GHz to 6 GHz. At 1.8 GHz the NF is typically 0.5 dB; at 6 GHz it rises to 0.75 dB.
The pinout is standard for a 4-TSFP NPN RF transistor: emitter, base, collector, and a ground/emitter reference lead. The exact pin assignment is documented in the Infineon datasheet for this part.
Within the same Infineon BFP7xx SiGe family, the BFP740F is the same die in the same 4-TSFP package. No second-source cross-reference is listed in the current record; for a dual-source qualification, review the Infineon portfolio for a part with matching fT, NF, and breakdown voltage.
The transition frequency (fT) is 42 GHz. The noise figure is specified for operation from 1.8 GHz to 6 GHz, which aligns with common sub-6 GHz wireless bands.