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Infineon Technologies BAS4004E6327HTSA1 — Discrete Semiconductors

Infineon BAS4004E6327HTSA1 Schottky Diode Array, 40V, 120mA

MPNBAS4004E6327HTSA1
Active

Infineon BAS4004E6327HTSA1 Schottky diode array, 40 V reverse voltage, 120 mA average rectified current per diode, 100 ps reverse recovery time, 1 pair series connection, SOT-23-3 surface mount package.

$0.3700Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS4004E6327HTSA1 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified (Io) (per diode)120mA (DC)
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySchottky
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Series Connection
Reverse recovery time100 ps

Product details

Series Schottky pair in a standard SOT-23 footprint

The BAS4004E6327HTSA1 is a Schottky diode array from Infineon, integrating two 40 V, 120 mA diodes in a common-cathode series configuration within a single SOT-23-3 package. Rated for a maximum reverse voltage of 40 V and an average rectified current of 120 mA per diode, it targets low-current signal rectification, clamping, and OR-ing in compact designs.

Switching speed and leakage at 30 V reverse bias

A reverse recovery time of 100 ps makes this part suitable for high-frequency switching applications up to several hundred MHz, where a standard PN-junction diode would introduce excessive switching loss. Reverse leakage is specified at 1 µA maximum at 30 V reverse bias — a figure that rises with junction temperature, so the effective leakage at 85 °C ambient should be derated per the Infineon datasheet curve. Forward voltage is 1 V maximum at 40 mA forward current, a typical Schottky Vf for this current class; the lower Vf vs a PN diode reduces conduction loss in low-voltage rails.

SOT-23-3 surface-mount package and tape-and-reel delivery

Housed in the industry-standard SOT-23-3 (PG-SOT23) package, the BAS4004E6327HTSA1 occupies a 2.9 mm × 1.3 mm footprint with 0.95 mm pin pitch — compatible with existing SOT-23 land patterns for reflow assembly. Supplied on tape and reel (Cut Tape also available), it integrates directly into automated pick-and-place lines without process change.

Active production, ROHS3 compliant, multi-source distribution

As an active, catalog-listed part, it is available through Infineon's authorized distribution network and independent channels; pricing and lead time are confirmed at RFQ against the BOM quantity.

Frequently asked questions

What is the reverse recovery time of BAS4004E6327HTSA1?

The reverse recovery time (trr) is 100 ps, making it suitable for high-speed switching applications up to several hundred MHz.