Infineon Technologies HEXFET series N-Channel MOSFET, AUIRL3705ZSTRL, 55 V, 75 A, 8 mOhm Rds(on), D2PAK (TO-263), surface mount.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Power | 130.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0029 |
| Status | Active |
| Supply voltage | 55.0 |
| Vgs(Th) (Max) @ id | 3 V @ 250µA |
| Switching current | 75.0 |
| Rds on (Max) @ id, vgs | 8mOhm @ 52 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 5 V |
The AUIRL3705ZSTRL: Gate charge of 60 nC at 5 V means the driver must supply 60 nC per switching cycle; at 100 kHz that is 6 mA average gate drive current, well within the capability of a standard MOSFET driver.
The 130 W power dissipation assumes adequate heatsinking through the board.