AUIRL1404STRL
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Discrete Semiconductors

AUIRL1404STRL Infineon N-Channel MOSFET, 40V, 160A, D2PAK

MPN AUIRL1404STRL
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon Technologies HEXFET® Automotive Power MOSFET, N-Channel, 40 V, 160 A switching, 4 mOhm Rds(on) at 10 V, D2PAK surface mount, AUIRL1404STRL.

Spot Stock · 24-48h Dispatch
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.79 / pc
Direct Purchase Ready
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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Supply Voltage 40.0
Output / Current 4mOhm @ 95 A, 10 V

Full Technical Specifications

14 Parameters
AUIRL1404STRL specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power3.8
Package_typeBulk
Capacitance_uf0.0066
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id3 V @ 250µA
Switching current160.0
Rds on (Max) @ id, vgs4mOhm @ 95 A, 10 V
Gate charge (Qg) (Max) @ vgs140 nC @ 5 V
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Technical Details & Description

Automotive-grade N-channel MOSFET in D2PAK

AUIRL1404STRL is an Infineon HEXFET N-channel power MOSFET rated for automotive applications, with a 40 V drain-source voltage and 160 A switching current capability. The 4 mOhm maximum on-resistance at 95 A and 10 V gate drive keeps conduction losses low in high-current switching circuits like engine control unit (ECU) power rails or electric pump drives.

Thermal and gate drive margins

Maximum gate-to-source voltage is ±20 V, which gives headroom for gate-drive transients in 12 V systems where the gate is driven from a boosted rail or bootstrap supply. Total gate charge is 140 nC at 5 V — a modest figure that allows direct drive from a standard gate-driver IC without excessive switching losses at moderate frequencies.

Frequently asked questions

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