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Infineon Technologies 1EDC10I12MHXUMA1 — Discrete Semiconductors

Infineon 1EDC10I12MHXUMA1 EiceDriver, 2500Vrms Isolation

MPN1EDC10I12MHXUMA1
End of Life

Infineon Technologies EiceDriver™ isolated gate driver, 1EDC10I12MHXUMA1, single-channel, 2500Vrms isolation, 10ns/9ns rise/fall, 3.1V–17V output supply, PG-DSO-8-59 package.

$3.06Ref. price · indicative, final on quote
Packaging8-SOIC (0.295", 7.50mm Width)
RoHSROHS3 Compliant
SeriesEiceDriver™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1EDC10I12MHXUMA1 specifications
ParameterValue
SeriesEiceDriver™
MountingSurface Mount
Voltage - isolation2500Vrms
Voltage - output supply3.1V ~ 17V
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMagnetic Coupling
Case8-SOIC (0.295\", 7.50mm Width)
Channels1
Rise (Fall time)10ns, 9ns

Product details

2500Vrms isolation with magnetic coupling

The 1EDC10I12MHXUMA1 is a single-channel isolated gate driver from the Infineon EiceDriver™ family. It uses magnetic coupling to transfer the drive signal across the isolation barrier, achieving 2500Vrms of galvanic isolation between the input and the output side. The output supply range of 3.1V to 17V covers both standard 12V IGBT gate drives and lower-voltage SiC MOSFET gate thresholds, giving the designer one BOM line that adapts across different switch types.

10ns/9ns rise/fall — switching-speed budget

Typical rise time of 10ns and fall time of 9ns place the 1EDC10I12MHXUMA1 in a class where the propagation delay and output edge rates are fast enough for hard-switching topologies running at 100–200 kHz, but without the ringing penalty of a sub-5ns driver driving a long gate-loop trace. The single-channel architecture in an 8-SOIC wide-body package (PG-DSO-8-59) gives the layout engineer a compact footprint — the 7.50mm body width provides the creepage distance needed to maintain the 2500Vrms isolation rating across the PCB.

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