ICBOMS

Diodes Incorporated — Memory (DRAM / SRAM / Flash / EEPROM)

Turnkey BOM procurement and spot-buy shortage sourcing for Diodes Incorporated Memory (DRAM / SRAM / Flash / EEPROM) — 42 part numbers with specifications and

DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V · 420 @ 2mA, 5V · 220 @ 2mA, 5V · 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA · 400mV @ 5mA, 100mA · 300mV @ 500µA, 10mA · 300mV @ 250µA, 5mA
Power - Max
250 mW · 150 mW · 310 mW · 350mW
Voltage - Collector Emitter Breakdown (Max)
45 V · 45V · 30 V · 50V
Transistor Type
NPN · 2 NPN (Dual) · 2 PNP (Dual) · 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package
SOT-23-6 · X1-DFN1006-3 · SOT-523 · SOT-23-3
Package / Case
SOT-23-6 · 3-UFDFN · SOT-523 · TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max)
100 mA · 100mA · 600mA · 200mA

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